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IXBF40N140

Features: • High Voltage BIMOSFETTM- substitute for high voltage MOSFETs with significantly lower voltage drop- fast switching for high frequency operation- reverse conduction capability• ISOPLUS i4-PACTM high voltage package- isolated back surface- enlarged creepage towards heatsink- ...

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SeekIC No. : 004381491 Detail

IXBF40N140: Features: • High Voltage BIMOSFETTM- substitute for high voltage MOSFETs with significantly lower voltage drop- fast switching for high frequency operation- reverse conduction capability•...

IXBF40N140 Data Sheet

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Part Number:
IXBF40N140
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop
- fast switching for high frequency operation
- reverse conduction capability
• ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline


Application

• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators


Specifications

Symbol Conditions Maximum Ratings
VCES TVJ = 25 to 150     IXBF 40N140
                                   IXBF 40N160		 1400
1600		 V
V
VGES   ±20 V
IC25
IC90		 TC = 25
TC= 90		 28
16		 A
A
ICM VGE = 15/0 V; RG = 22 ; TVJ = 125
RBSOA, Clamped inductive load; L = 100 H		 40 A
VCEK 0.8VCES
Ptot TC = 25 250 W



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