Features: • Operating Voltage Range: 3.0 to 18 V• Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C• Noise margin (over full package temperature range): 1.0 V min @ 5.0 V supply 2.0 V min @ 10.0 V supply 2.5 V min @ 15.0 V sup...
IW4093B: Features: • Operating Voltage Range: 3.0 to 18 V• Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C• Noise margin (over full p...
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Symbol | Parameter | Value | Unit |
VCC | DC Supply Voltage (Referenced to GND) | -0.5 to +20 | V |
VIN | DC Input Voltage (Referenced to GND) | -0.5 to VCC +0.5 | V |
VOUT | DC Output Voltage (Referenced to GND) | -0.5 to VCC +0.5 | V |
IIN | DC Input Current, per Pin | ±10 | mA |
PD | Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ |
750 500 |
mW |
PD | Power Dissipation per Output Transistor | 100 | mW |
Tstg | Storage Temperature | -65 to +150 | °C |
TL | Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) |
260 | °C |
The IW4093B consists of four Schmitt-trigger circuits. Each circuit functions as a two-input NAND gate with Schmitt-trigger action on both inputs. The gate switches at different points for positive- and negative- going signals. The difference between the positive voltage (VP) and the negative voltage (VN) is defined as hysteresis voltage (VH) (see Fig.1).