ITR9909

Series: -
Sensing Method: Reflective
Current - Collector (Ic) (Max): 50mA
Current - DC Forward (If): 50mA
Output Type: Phototransistor
Mounting Type: Through Hole
Packaging: Bulk
Sensing Distance: -
Voltage - Collector Emitter Breakdown (Max): 30V
Package / Case: 4-DIP Module
Response Time: 15µs, 15µs
Manufacturer: Everlight Electronics Co Ltd


Features:

• Fast response time
• High analytic
• Cut-off visible wavelength p=840nm
• High sensitivity
• Pb free


Application

• Mouse Copier
• Switch Scanner
• Non-contact Switching
• For Direct PC Board


Specifications

Parameter		Symbol	Rating	Unit
Input	Power Dissipation	PD	100	mW
	Reverse Voltage	VR	5	V
	Forward Current	IF	50	mA
	Peak Forward Current(*1)	IFP	1	A
Output	Collect Power Dissipation	Pc	75	mW
	Collect Current	Ic	20	mA
	Collector-Emitter Voltage	VCE	30	V
	Emitter-Collector Voltage	VEC	5	V
Operating Temperature		Topr	-25~+85
Storage Temperature		Tstg	-40~+85
Soldering Temperature(*2)		Tsol	260

Description

The ITR9909 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED only. This is the normal situation. But when an object is in between, phototransistor could not receives the radiation. For additional component information, please refer to IR1254-R8 and PT1254-6B.