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Series: | - | Manufacturer: | Everlight Electronics Co Ltd | ||
Sensing Distance: | - | Maximum Power Dissipation : | 700 mW | ||
Sensing Method: | Reflective | Voltage - Collector Emitter Breakdown (Max): | 30V | ||
Current - Collector (Ic) (Max): | 20mA | Current - DC Forward (If): | 50mA | ||
Output Type: | Phototransistor | Response Time: | 15µs, 15µs | ||
Mounting Type: | Through Hole | Package / Case: | 4-DIP (0.100", 2.54mm) |
Parameter | Symbol | Rating | Unit | |
Input | Power Dissipation | PD | 100 | mW |
Reverse Voltage | VR | 5 | V | |
Forward Current | IF | 50 | mA | |
Peak Forward Current(*1) | IFP | 1.0 | A | |
Output | Collect Power Dissipation | Pc | 75 | mW |
Collect Current | Ic | 20 | mA | |
Collector-Emitter Voltage | VCE | 30 | V | |
Emitter-Collector Voltage | VEC |
5 | V | |
Operating Temperature | Topr | -25~+85 | ||
Storage Temperature | Tstg | -40~+85 | ||
Soldering Temperature(*2) | Tsol | 260 |
The ITR9904 consists of an infrared emitting diode and an NPN silicon phototransistor, encased oblique angle (45 °) on converging optical axis in a black Thermo-plastic housing. The phototransistor receives radiation from the IRED only, and avoids the noise from ambient light.