ITH08F06

      The ITH08F06 is a very robust n-channel , enchancement mode insulate gate bipolar transistor(IGBT) designed for low power disspation in a wide range of high voltage application such as power supplied and motor durves, The high impemdemce gate simplifies gate druve considerations , allowing operation directly from low power control circuitry .  The device is optimised for high fenquency operation with fast rise and fall times. The product is suitable for modern systems employing switching fequencies up to and beyound the audible spectrum. 
      The ITH08F06 has seven unique features : The first one is enchancement mode n-channel device. The second one is high swithching speed. The third one is low on-state saturation voltage. The forth one is high input impedance sinplifies gate drive. The fifth one is TO220 and TO252 package options. The sixth one is fully short circuit rated to 10 s. The eighth one is square RBSOA. Also , it has six applications which  is as follows : The first one is high fenquency inverters. The second one is motor control. The third one is swithched mode power supplies. The forth one is high frequency welding . The fifth one is UPS systems. The sixth one is PWM drives.
      Then, there are some absolute maximum ratings about ITH08F06. Collector -emitter voltage is 600 V max when the VGE is 0 V. Gate-emitter voltage is ±20 V . Continuous collector current is 14 A when the Tcase is 25 . Continuous collector current is 8 A when the Tcase is 85 . Power dissipation is 30 W when the Tcase is 85 . There are also some thermal and mechanical ratings about it. Thermal resistance is 2.1 /W under the test condition. Operating junction temperature range is from -40  to + 150 . Storage temperature range is from  -40  to + 150 . Mounting torque is 1.1 Nm (M3 screw).
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