SpecificationsPower DissipationDevice Dissipation1 @25°C (Pd)........................ 3400 WThermal Resistance1 (JC) ................................08°C/WVoltage and CurrentCollector-Base Voltage ...........................................65VEmitter-Base Voltage......................................
ITC1000: SpecificationsPower DissipationDevice Dissipation1 @25°C (Pd)........................ 3400 WThermal Resistance1 (JC) ................................08°C/WVoltage and CurrentCollector-Base Voltage ....
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The ITC1000 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold thin-film metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low thermal resistance package reduces junction temperature which extends the life time of the product.