Features: • Short-circuit protection• Input protection• Overtemperature protection with hysteresis• Overload protection• Overvoltage protection• Switching inductive load• Clamp of negative output voltage with inductive loads• Undervoltage shutdown...
ISP 452: Features: • Short-circuit protection• Input protection• Overtemperature protection with hysteresis• Overload protection• Overvoltage protection• Switching inducti...
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Parameter | Symbol | Values | Unit |
Supply voltage | Vbb | 40 | V |
Load current self-limited | IL | IL(SC) | A |
Maximum input voltage2) | VIN | -5.0...Vbb | V |
Maximum input current | IIN | ±5 | mA |
Inductive load switch-off energy dissipation, single pulse IL = 0.5A, Tj, start = 150°C (not tested, specified by design) |
EAS |
0.5 |
J |
Load dump protection3) VLoadDump = UA+ Vs RI=2 , td=400ms, IN= low or high, UA= 13.5 V (not tested, specified by design) RL= 24 RL= 80 |
VLoad dump 4) | 60 80 |
V |
Electrostatic discharge capability (ESD)5) PIN 3 PIN 1,2,4 |
VESD | ±1 ±2 |
kV |
Junction Temperature Operating temperature range Storage temperature range |
Tj Ta Tstg |
150 -30 ...+85 -40 ...+105 |
°C |
Max. power dissipation (DC)6) TA = 25 °C | Ptot | 1.8 | W |
Thermal resistance chip - soldering point: chip - ambient:6) |
RthJS RthJA |
7 70 |
K/W |
2) At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in the GND connection.
A resistor for the protection of the input is integrated.
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) HBM according to MIL-STD 883D, Methode 3015.7
6) Device on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
• N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology.
• Providing embedded protection functions.ISP 452