PinoutDescriptionThe ISPLSI1032E-100LT is a kind of high density programmable logic device containing 192 registers, 64 universal I/O pins, eight dedicated input pins, four dedicated clock inputpins and a global routing pool (GRP). The basic unit of logic on the ISPLSI1032E-100LT is the Generic Lo...
ISPLSI1032E-100LT: PinoutDescriptionThe ISPLSI1032E-100LT is a kind of high density programmable logic device containing 192 registers, 64 universal I/O pins, eight dedicated input pins, four dedicated clock inputpins...
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Features: * HIGH DENSITY PROGRAMMABLE LOGIC - 8,000 PLD Gates - 96 I/O Pins, Twelve Dedicated Inpu...
DescriptionThe ispLSi 1016 is a kind of high-density programmable logic device containing 96 regis...
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CPLD - Complex Programmable Logic Devices USE ispMACH 4000V
The ISPLSI1032E-100LT is a kind of high density programmable logic device containing 192 registers, 64 universal I/O pins, eight dedicated input pins, four dedicated clock input
pins and a global routing pool (GRP). The basic unit of logic on the ISPLSI1032E-100LT is the Generic Logic Block (GLB). It is available in 100-pin TQFP package.
There are some features of ISPLSI1032E-100LT as follows: (1) high performance E2CMOS® technology: fmax=100 MHz maximum operating frequency, TTL compatible inputs and outputs, electrically erasable and reprogrammable, non-volatile and 100% tested at time of manufacture; (2) in system programmable:in-system programmable (ISP™) 5 V only and reprogram soldered devices for faster prototyping; (3) offers the erase of use and fast system speed of PLDs with the density and flexibility of field programmable gate arrays: enhanced pin locking capability, four dedicated clock input pins, synchronous and asynchronous clocks and programmable output slew rate control to minimize switching noise.
What comes next is about the absolute maximum ratings of ISPLSI1032E-100LT. (1): supply voltage Vcc is from -0.5 to +7.0 V; (2): input voltage applied is from -2.5 to VCC+1.0 V; (3): off-state output voltage applied is from -2.5 to VCC+1.0 V; (4): case temp. with power applied is from -55 to +125; (5): storage temperature is from -55 to +125; (6): max. junction temp. (TJ) with power applied is 150.