Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation· Low drain to tab capacitance(<35pF)· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Unclamped Inductive Switching (UIS) ratedApplicatio...
ISOPLUS220: Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation· Low drain to tab capacitance(<35pF)· Low RDS (on) HDMOSTM ...
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Features: • DCB Isolated mounting tab• Meets TO-247AD package Outline• High curr...