Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation· 3RD generation CoolMOS power MOSFET- High blocking capability- Low on resistance- Avalanche rated for unclamped inductive switching (UIS)· Low thermal resistance...
ISO264TM: Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation· 3RD generation CoolMOS power MOSFET- High blocking capability...
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