ISL9R860S2

Product : Ultra Fast Recovery Rectifiers
Reverse Voltage : 600 V
Configuration : Single
Forward Continuous Current : 8 A
Mounting Style : Through Hole
Package / Case : TO-262
Max Surge Current : 100 A
Reverse Current IR : 100 ua
Recovery Time : 30 ns
Forward Voltage Drop : 2.4 V
Packaging : Rail


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . t_b / t_a > 2.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t_rr < 25ns
• Operating Temperature . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated


Application

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


Specifications

Symbol	Parameter	Ratings	Units
VRRM	Repetitive Reverse Voltage	600	V
VRWM	Working Peak Reverse Voltage	600	V
VR	DC Blocking Voltage	600	V
IF(AV)	Average Rectified Forward Current (TC = 147oC) Total Device Current (Both Legs)	8	A
IFRM	Repetitive Peak Surge Current (20kHz Square Wave)	16	A
IFSM	Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	100	A
PD	Power Dissipation	85	W
EAVL	Avalanche Energy (1A, 40mH)	20	mJ
TJ, TSTG	Operating and Storage Temperature Range	-55 to 175	°C
TL TPKG	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	300 260	°C °C

Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and peration of the device at these or any other conditions above those indicated in the perational sections of this specification is not implied.

Description

The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are tealth™ diodes optimized for low loss performance in igh frequency hard switched applications. The tealth™ family exhibits low reverse recovery current I_RRM) and exceptionally soft recovery under typical perating conditions.

This device is intended for use as a free wheeling or oost diode in power supplies and other power witching applications. The low IRRM and short ta phase educe loss in switching transistors. The soft recovery inimizes ringing, expanding the range of conditions nder which the diode may be operated without the use f additional snubber circuitry. Consider using the tealth™ diode with an SMPS IGBT to provide the ost efficient and highest power density design at ower cost.

Formerly developmental type TA49409.