Features: • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb/ ta > 3• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 20ns• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175• Reverse Voltage. . . . . . . . . . . ...
ISL9R460S3S: Features: • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb/ ta > 3• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 20ns• Operating ...
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Symbol | Parameter | Ratings | Units |
VRRM | Peak Repetitive Reverse Voltage | 600 | V |
VRWM | Working Peak Reverse Voltage | 600 | V |
VR | DC Blocking Voltage | 600 | V |
IF(AV) | Average Rectified Forward Current (TC = 155°C) | 4 | A |
IFRM | Repetitive Peak Surge Current (20kHz Square Wave) | 8 | A |
IFSM | Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) | 50 | A |
PD | Power Dissipation | 58 | W |
EAVL | Avalanche Energy (0.5A, 80mH) | 10 | mJ |
TJ, TSTG | Operating and Storage Temperature Range | -55 to 175 | |
TL TPKG |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 |
300 260 |
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM) and exceptionally soft recovery under typical operating conditions.
This ISL9R460S3S is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49408.