ISL9R3060G2

Product : Ultra Fast Recovery Rectifiers
Reverse Voltage : 600 V
Configuration : Single
Mounting Style : Through Hole
Recovery Time : 45 ns
Forward Continuous Current : 30 A
Packaging : Tube
Reverse Current IR : 100 ua
Package / Case : TO-247
Max Surge Current : 325 A
Forward Voltage Drop : 2.4 V at 30 A


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t_b / t_a > 1.2
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t_rr < 35ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175^oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated


Application

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


Specifications

Symbol	Parameter	Ratings	Units
VRRM	Repetitive Peak Reverse Voltage	600	V
VRWM	Working Peak Reverse Voltage	600	V
VR	DC Blocking Voltage	600	V
IF(AV)	Average Rectified Forward Current	30	A
IFRM	Repetitive Peak Surge Current (20kHz Square Wave)	70	A
IFSM	Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	325	A
PD	Power Dissipation	200	W
EAVL	Avalanche Energy (1A, 40mH)	20	mJ
TJ, TSTG	Operating and Storage Temperature Range	-55 to 175	°C
TL TPKG	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	300 260	°C °C

Description

The ISL9R3060G2 and ISL9R3060P2 are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I_RRM) and exceptionally soft recovery under typical operating conditions.

This ISL9R3060G2 is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I_RRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49411.

Parameters:

Technical/Catalog Information	ISL9R3060G2
Vendor	Fairchild Optoelectronics Group
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	30A
Voltage - Forward (Vf) (Max) @ If	2.4V @ 30A
Reverse Recovery Time (trr)	45ns
Current - Reverse Leakage @ Vr	100A @ 600V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-247
Packaging	Bulk
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ISL9R3060G2 ISL9R3060G2