ISL9R30120G2

Product : Fast Recovery Rectifiers
Configuration : Single
Mounting Style : Through Hole
Forward Continuous Current : 30 A
Packaging : Tube
Package / Case : TO-247
Reverse Voltage : 1200 V
Forward Voltage Drop : 3.3 V
Recovery Time : 100 ns
Max Surge Current : 325 A
Reverse Current IR : 1000 uA


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 4.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 56ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated


Application

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


Specifications

Parameter	Symbol	Ratings	Units
Repetitive Peak Reverse Voltage	V RRM	1200	V
Working Peak Reverse Voltage	V RWM	1200	V
DC Blocking Voltage	V R	1200	V
Average Rectified Forward Current (TC = 80oC)	I F(AV)	30	A
Repetitive Peak Surge Current (20kHz Square Wave)	I FRM	70	A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	I FSM	325	A
Power Dissipation	P D	166	W
Avalanche Energy (1A, 40mH)	E AVL	20	mJ
Operating and Storage Temperature Range	T J , T STG	-55 to 150	°C
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528	T L TPKG	300 260	°C °C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.

This ISL9R30120G2 is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49415.


Parameters:

Technical/Catalog Information	ISL9R30120G2
Vendor	Fairchild Optoelectronics Group
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1200V (1.2kV)
Current - Average Rectified (Io)	30A
Voltage - Forward (Vf) (Max) @ If	3.3V @ 30A
Reverse Recovery Time (trr)	100ns
Current - Reverse Leakage @ Vr	100A @ 1200V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-247
Packaging	Tube
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ISL9R30120G2 ISL9R30120G2