Features: • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.0• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 45ns• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC• Reverse Voltage. . . . . . . . . ....
ISL9R18120S3S: Features: • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.0• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 45ns• Operating...
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Symbol | Parameter | Ratings | Units |
VRRM | Repetitive Reverse Voltage | 1200 | V |
VRWM | Working Peak Reverse Voltage | 1200 | V |
VR | DC Blocking Voltage | 1200 | V |
IF(AV) | Average Rectified Forward Current (TC = 92oC) Total Device Current (Both Legs) |
18 | A |
IFRM | Repetitive Peak Surge Current (20kHz Square Wave) | 36 | A |
IFSM | Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) | 200 | A |
PD | Power Dissipation | 125 | W |
EAVL | Avalanche Energy (1A, 40mH) | 20 | mJ |
TJ, TSTG | Operating and Storage Temperature Range | -55 to 150 | °C |
TL TPKG |
Maximum Temperature for Soldering |
300 260 |
°C °C |
Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and eration of the device at these or any other conditions above those indicated in the perational sections of this specification is not implied.
The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are tealth™ diodes optimized for low loss performance in high requency hard switched applications. The Stealth™ family xhibits low reverse recovery current (IRM(REC)) and
exceptionally soft recovery under typical operating conditions.
This ISL9R18120S3S is intended for use as a free wheeling or boost iode in power supplies and other power switching pplications. The low IRM(REC) and short ta phase reduce loss n switching transistors. The soft recovery minimizes ringing, xpanding the range of conditions under which the diode may e operated without the use of additional snubber circuitry. onsider using the Stealth™ diode with a 1200V NPT IGBT to rovide the most efficient and highest power density design at ower cost.
Formerly developmental type TA49414.