ISL9R18120G2

Product : Ultra Fast Recovery Rectifiers
Configuration : Single
Mounting Style : Through Hole
Max Surge Current : 200 A
Packaging : Tube
Reverse Current IR : 100 ua
Package / Case : TO-247
Forward Continuous Current : 18 A
Recovery Time : 70 ns
Reverse Voltage : 1200 V
Forward Voltage Drop : 3.3 V at 18 A


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t_b / t_a > 5.0
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t_rr < 45ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated


Application

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


Specifications

Symbol	Parameter	Ratings	Units
VRRM	Repetitive Reverse Voltage	1200	V
VRWM	Working Peak Reverse Voltage	1200	V
VR	DC Blocking Voltage	1200	V
IF(AV)	Average Rectified Forward Current (TC = 92oC) Total Device Current (Both Legs)	18	A
IFRM	Repetitive Peak Surge Current (20kHz Square Wave)	36	A
IFSM	Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	200	A
PD	Power Dissipation	125	W
EAVL	Avalanche Energy (1A, 40mH)	20	mJ
TJ, TSTG	Operating and Storage Temperature Range	-55 to 150	°C
TL TPKG	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528	300 260	°C °C

Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and eration of the device at these or any other conditions above those indicated in the perational sections of this specification is not implied.

Description

The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are tealth™ diodes optimized for low loss performance in high requency hard switched applications. The Stealth™ family xhibits low reverse recovery current (I_RM(REC)) and
exceptionally soft recovery under typical operating conditions.

This ISL9R18120G2 is intended for use as a free wheeling or boost iode in power supplies and other power switching pplications. The low I_RM(REC) and short t_a phase reduce loss n switching transistors. The soft recovery minimizes ringing, xpanding the range of conditions under which the diode may e operated without the use of additional snubber circuitry. onsider using the Stealth™ diode with a 1200V NPT IGBT to rovide the most efficient and highest power density design at ower cost.

Formerly developmental type TA49414.

Parameters:

Technical/Catalog Information	ISL9R18120G2
Vendor	Fairchild Optoelectronics Group
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1200V (1.2kV)
Current - Average Rectified (Io)	18A
Voltage - Forward (Vf) (Max) @ If	3.3V @ 18A
Reverse Recovery Time (trr)	70ns
Current - Reverse Leakage @ Vr	100A @ 1200V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-247
Packaging	Tube
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ISL9R18120G2 ISL9R18120G2