ISL9R1560S2

Product : Ultra Fast Recovery Rectifiers
Reverse Voltage : 600 V
Configuration : Single
Mounting Style : Through Hole
Max Surge Current : 200 A
Package / Case : TO-262
Packaging : Tube
Reverse Current IR : 100 ua
Forward Continuous Current : 15 A
Recovery Time : 40 ns
Forward Voltage Drop : 2.2 V


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t_b / t_a > 1.2
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t_rr < 30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated


Application

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


Specifications

Symbol	Parameter	Ratings	Units
VRRM	Repetitive Reverse Voltage	600	V
VRWM	Working Peak Reverse Voltage	600	V
VR	DC Blocking Voltage	600	V
IF(AV)	Average Rectified Forward Current (TC = 145oC) Total Device Current (Both Legs)	15	A
IFRM	Repetitive Peak Surge Current (20kHz Square Wave)	30	A
IFSM	Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	200	A
PD	Power Dissipation	150	W
EAVL	Avalanche Energy (1A, 40mH)	20	mJ
TJ, TSTG	Operating and Storage Temperature Range	-55 to 175	°C
TL TPKG	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	300 260	°C °C

Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and peration of the device at these or any other conditions above those indicated in the perational sections of this specification is not implied.

Description

The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2 and ISL9R1560S3S are Stealth™ diodes optimized for low loss
performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I_RM(REC)) and exceptionally soft recovery under typical operating conditions.

This ISL9R1560S2 is intended for use as a free wheeling or boost diode in power supplies and other power switching
applications. The low I_RM(REC) and short t_a phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may e operated without the use of additional snubber circuitry. onsider using the Stealth™ diode with an SMPS IGBT to rovide the most efficient and highest power density design at ower cost.

Formerly developmental type TA49410.