ISL9R1560PF2

Product : Ultra Fast Recovery Rectifiers
Reverse Voltage : 600 V
Configuration : Single
Mounting Style : Through Hole
Max Surge Current : 200 A
Packaging : Tube
Reverse Current IR : 100 ua
Package / Case : TO-220F
Forward Continuous Current : 15 A
Recovery Time : 40 ns
Forward Voltage Drop : 2.2 V


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t_b / t_a > 1.2
• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . t_rr < 30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV
• Avalanche Energy Rated


Application

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


Specifications

Symbol	Parameter	Ratings	Units
VRRM	Repetitive Reverse Voltage	600	V
VRWM	Working Peak Reverse Voltage	600	V
VR	DC Blocking Voltage	600	V
IF(AV)	Average Rectified Forward Current (TC = 25oC) Total Device Current (Both Legs)	15	A
IFRM	Repetitive Peak Surge Current (20kHz Square Wave)	30	A
IFSM	Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	200	A
PD	Power Dissipation	30	W
EAVL	Avalanche Energy (1A, 40mH)	20	mJ
TJ, TSTG	Operating and Storage Temperature Range	-55 to 150	°C
TL	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s	300	°C

Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and peration of the device at these or any other conditions above those indicated in the perational sections of this specification is not implied.

Description

The ISL9R1560PF2 is a Stealth™ diode optimized for ow loss performance in high frequency hard switched
applications. The Stealth™ family exhibits low reverse ecovery current (I_RM(REC)) and exceptionally soft ecovery under typical operating conditions.

This ISL9R1560PF2 is intended for use as a free wheeling or oost diode in power supplies and other power witching applications. The low I_RM(REC) and short ta hase reduce loss in switching transistors. The soft ecovery minimizes ringing, expanding the range of onditions under which the diode may be operated ithout the use of additional snubber circuitry. Consider sing the Stealth™ diode with an SMPS IGBT to rovide the most efficient and highest power density esign at lower cost.

Formerly developmental type TA49410.

Parameters:

Technical/Catalog Information	ISL9R1560PF2
Vendor	Fairchild Optoelectronics Group
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	15A
Voltage - Forward (Vf) (Max) @ If	2.2V @ 15A
Reverse Recovery Time (trr)	40ns
Current - Reverse Leakage @ Vr	100A @ 600V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220
Packaging	Tube
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ISL9R1560PF2 ISL9R1560PF2