Position: Home  > All Categories> Integrated Circuits (ICs) > ISL9N315AD3

ISL9N315AD3

MOSFET N-Ch LL UltraFET PWM Optimized

product image

ISL9N315AD3 Picture
See larger image
SeekIC No. : 00162932 Detail

ISL9N315AD3: MOSFET N-Ch LL UltraFET PWM Optimized

ISL9N315AD3 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
ISL9N315AD3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.028 Ohms
Package / Case : TO-251


Features:

• Fast switching
• rDS(ON) = 0.012Ω (Typ), VGS = 10V
• rDS(ON) = 0.022Ω (Typ), VGS = 4.5V
• Qg (Typ) = 18nC, VGS = 5V
• Qgd (Typ) = 3.4nC
• CISS (Typ) = 900pF


Application

• DC/DC converters


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
VGS Drain Current
Continuous (TC = 25, VGS = 10V)
Continuous (TC = 100, VGS = 4.5V)
Continuous (TC = 25, VGS = 10V, RJA= 52/W)
Pulsed		 30 A
23 A
10 A
Figure 4 A
PD Power dissipation
Derate above 25		 55
0.37		 W
W/
TJ, TSTG Operating and Storage Temperature -55 to 175



Description

This ISL9N315AD3 employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this ISL9N315AD3 improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Formerly developmental type 83337




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires
821-0814-a
415-0100-150
Transformers
TM-09210
BV222-1-00992
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Cable Assemblies
CS1W-CN114
XW2Z-500T
Optical Inspection Equipment
AA924
A21K4B
RF and RFID
X3C26P1-30S
1P620S
View more