MOSFET N-Ch LL UltraFET PWM Optimized
ISL9N312AS3ST: MOSFET N-Ch LL UltraFET PWM Optimized
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 58 A | ||
Resistance Drain-Source RDS (on) : | 0.02 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AB | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain to Source Voltage |
30 |
V |
VGS |
Drain to Source Voltage |
±20 |
V |
ID |
Drain Current Continuous (T 58 AC= 25, VGS= 10V) Continuous (T 58 AC= 100, VGS= 4.5V) Continuous (T 58 AC= 25, VGS= 10V , RèJA= 43/W)) Pulsed |
|
|
58 |
A | ||
32 |
A | ||
12 |
A | ||
Figure 4 |
A | ||
PD |
Power dissipation Derate above 25 |
75 0.5 |
W W |
TJ, TSTG |
Operating and Storage Temperature |
-55 to 175 |
|
This ISL9N312AS3ST employs a new advanced trench MOSFETtechnology and features low gate charge while maintaininglow on-resistance.
Optimized for switching applications, this ISL9N312AS3ST improvesthe overall efficiency of DC/DC converters and allows operation to higher switching frequencies.