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ISL9N312AP3: MOSFET N-Ch LL UltraFET PWM Optimized

ISL9N312AP3 Data Sheet

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Part Number:: ISL9N312AP3
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/18

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	58 A
Resistance Drain-Source RDS (on) :	0.012 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.012 Ohms

Features:

Fast switching
r_DS(ON)= 0.010(Typ), V_GS= 10V
r_DS(ON)= 0.017(Typ), V_GS= 4.5V
Q_g(Typ) = 13nC, V_GS= 5V
Q_gd(Typ) = 4.5nC
C_ISS(Typ) = 1450pF

Application

• DC/DC converters

Specifications

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	30	V
V_GS	Drain to Source Voltage	±20	V
I_D	Drain Current Continuous (T 58 AC= 25, VGS= 10V) Continuous (T 58 AC= 100, VGS= 4.5V) Continuous (T 58 AC= 25, VGS= 10V , RèJA= 43/W)) Pulsed
		58	A
		32	A
		12	A
		Figure 4	A
P_D	Power dissipation Derate above 25	75 0.5	W W
T_{J, TSTG}	Operating and Storage Temperature	-55 to 175

Description

This ISL9N312AP3 employs a new advanced trench MOSFETtechnology and features low gate charge while maintaininglow on-resistance.

Optimized for switching applications, this ISL9N312AP3 improvesthe overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

ISL9N312AP3

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