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ISL9N312AP3

MOSFET N-Ch LL UltraFET PWM Optimized

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SeekIC No. : 00163291 Detail

ISL9N312AP3: MOSFET N-Ch LL UltraFET PWM Optimized

ISL9N312AP3 Data Sheet

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Part Number:
ISL9N312AP3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.012 Ohms


Features:

Fast switching
rDS(ON)= 0.010(Typ), VGS= 10V
rDS(ON)= 0.017(Typ), VGS= 4.5V
Qg(Typ) = 13nC, VGS= 5V
Qgd(Typ) = 4.5nC
CISS(Typ) = 1450pF


Application

• DC/DC converters


Specifications

 

Symbol

Parameter

Ratings

Units

VDSS

Drain to Source Voltage

30

V

VGS

Drain to Source Voltage

±20

V

ID

Drain Current

Continuous (T 58 AC= 25, VGS= 10V)

Continuous (T 58 AC= 100, VGS= 4.5V)

Continuous (T 58 AC= 25, VGS= 10V , RèJA= 43/W))

Pulsed

 

 

58

A

32

A

12

A

Figure 4

A

PD

Power dissipation

Derate above 25

75

0.5

W

W

TJ, TSTG

Operating and Storage Temperature

-55 to 175




Description

This ISL9N312AP3 employs a new advanced trench MOSFETtechnology and features low gate charge while maintaininglow on-resistance.

Optimized for switching applications, this ISL9N312AP3 improvesthe overall efficiency of DC/DC converters and allows operation to higher switching frequencies.




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