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ISL9N308AS3ST

MOSFET N-Ch UltraFET Trench Logic Level

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SeekIC No. : 00160257 Detail

ISL9N308AS3ST: MOSFET N-Ch UltraFET Trench Logic Level

ISL9N308AS3ST Data Sheet

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Part Number:
ISL9N308AS3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.008 Ohms
Package / Case : TO-263AB


Features:

Fast switching
r DS(ON)  = 0.0064 (Typ), VGS  = 10V
r DS(ON)  = 0.010 (Typ), VGS= 4.5V
Qg   (Typ) = 24nC, VGS  = 5V
Qgd(Typ) = 8nC
CISS  (Typ) = 2600pF



Application

DC/DC converters


Specifications

Symbol Parameter Ratings Units
VDSS
 Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID Drain Current
Continuous (TC = 25  , VGS = 10V)
Continuous (TC = 100  , VGS = 4.5V)
Continuous (T C= 25  , VGS = 10V, R = 43  /W)
Pulsed		 75 A
48 A
15 A
Figure 4 A
PD Power dissipation
Derate above 25  		 100
0.67		 W
W/
TJ TSTG Operating and Storage Temperature -55 to 175  



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