ISL9N308AD3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

• Fast switching
• r_DS(ON) = 0.0064 (Typ), V_GS = 10V
• r_DS(ON) = 0.010 (Typ), V_GS = 4.5V
• Q_g (Typ) = 24nC, V_GS = 5V
• Q_gd (Typ) = 8nC
• C_ISS (Typ) = 2600pF

Application

• DC/DC converters


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 4.5V) Continuous (TC = 25, VGS = 10V, RJA= 52/W) Pulsed	50	A
		48	A
		14	A
		Figure 4	A
PD	Power dissipation Derate above 25	100 0.67	W        W/
TJ, TSTG	Operating and Storage Temperature	-55 to 175

Description

This ISL9N308AD3 employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this ISL9N308AD3 improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.