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ISL9N307AS3ST

MOSFET N-Ch LL UltraFET PWM Optimized

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SeekIC No. : 00162583 Detail

ISL9N307AS3ST: MOSFET N-Ch LL UltraFET PWM Optimized

ISL9N307AS3ST Data Sheet

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Part Number:
ISL9N307AS3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0115 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0115 Ohms
Package / Case : TO-263AB


Features:

•Fast switching
•rDS(ON) = 0.006Ω(Typ), VGS= 10V
•rDS(ON) = 0.010Ω (Typ), VGS = 4.5V
•Qg (Typ) = 28nC, VGS = 5V
•Qgd (Typ) = 10nC
•CISS(Typ) = 3000pF


Application

•DC/DC converters


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID Drain Current
Continuous (TC = 25, VGS = 10V)
Continuous (TC = 100, VGS = 4.5V)
Continuous (TC = 25, VGS = V, RJC = 43/W)
Pulsed
 75 A
52 A
16 A
Figure 4 A
PD Power dissipation
Derate above 25		 100
0.67		 W
W/
TJ, TSTG Operating and Storage Temperature -55 to 175  



Description

This ISL9N307AS3ST employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this ISL9N307AS3ST improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.




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