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ISL9N306AP3

MOSFET N-Ch LL UltraFET PWM Optimized

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SeekIC No. : 00161802 Detail

ISL9N306AP3: MOSFET N-Ch LL UltraFET PWM Optimized

ISL9N306AP3 Data Sheet

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Part Number:
ISL9N306AP3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms


Features:

• Fast switching
• rDS(ON) = 0.0052Ω (Typ), VGS = 10V
• rDS(ON) = 0.0085Ω (Typ), VGS = 4.5V
• Qg (Typ) = 30nC, VGS = 5V
• Qgd (Typ) = 11nC
• CISS (Typ) = 3400pF


Application

• DC/DC converters


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID Drain Current
Continuous (TC = 25oC, VGS=10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = V, RJC = 43oC/W)
Pulsed		 75 A
61 A
18 A
Figure 4 A
PD
 Power dissipation
Derate above 25oC		 125
0.83		 W
W/oC
TJ, TSTG Operating and Storage Temperature -55 to 175 oC



Description

This ISL9N306AP3 employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this ISL9N306AP3 improves the overall efficiency of DC/DC converters and allowsoperation to higher switching frequencies.




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