Position: Home  > All Categories> Integrated Circuits (ICs) > ISL9N306AP3

ISL9N306AP3

MOSFET N-Ch LL UltraFET PWM Optimized

product image

ISL9N306AP3 Picture
See larger image
SeekIC No. : 00161802 Detail

ISL9N306AP3: MOSFET N-Ch LL UltraFET PWM Optimized

ISL9N306AP3 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
ISL9N306AP3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms


Features:

• Fast switching
• rDS(ON) = 0.0052Ω (Typ), VGS = 10V
• rDS(ON) = 0.0085Ω (Typ), VGS = 4.5V
• Qg (Typ) = 30nC, VGS = 5V
• Qgd (Typ) = 11nC
• CISS (Typ) = 3400pF


Application

• DC/DC converters


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID Drain Current
Continuous (TC = 25oC, VGS=10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = V, RJC = 43oC/W)
Pulsed		 75 A
61 A
18 A
Figure 4 A
PD
 Power dissipation
Derate above 25oC		 125
0.83		 W
W/oC
TJ, TSTG Operating and Storage Temperature -55 to 175 oC



Description

This ISL9N306AP3 employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this ISL9N306AP3 improves the overall efficiency of DC/DC converters and allowsoperation to higher switching frequencies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Crystals and Oscillators
WT325BI0030.000000
2SB49
RF and RFID
X3C26P1-30S
1P620S
Tapes, Adhesives
803
AC452-2
View more