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ISL9N306AD3ST

MOSFET N-Ch LL UltraFET PWM Optimized

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SeekIC No. : 00162653 Detail

ISL9N306AD3ST: MOSFET N-Ch LL UltraFET PWM Optimized

ISL9N306AD3ST Data Sheet

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Part Number:
ISL9N306AD3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms
Package / Case : TO-252AA


Features:

•  Fast switching
•  rDS(ON)     = 0.0052Ω (Typ), VGS = 10V
•  rDS(ON)     = 0.0085Ω (Typ), VGS = 4.5V
•  Qg (Typ)    = 30nC,               VGS = 5V
•  Qgd (Typ)  = 11nC
•  CISS (Typ) = 3400pF


Application

•    DC/DC converters


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID Drain Current
Continuous (TC= 25oC, VGS= 10V) = 100o
Continuous (TC= 25oC, VGS= V, RJC=52oCW
Pulsed		 50 A
50 A
16 A
Figure 4A
PD Power dissipation
Derate above 25oC
 125
0.83		 W
W/
TJ, TSTG Operating and Storage Temperature -55 to 175



Description

This ISL9N306AD3ST employs a new advanced trench MOSFET technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this ISL9N306AD3ST improves the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.




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