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ISL9N306AD3

MOSFET 30V N-Channel Logic Level PWM

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SeekIC No. : 00163582 Detail

ISL9N306AD3: MOSFET 30V N-Channel Logic Level PWM

ISL9N306AD3 Data Sheet

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Part Number:
ISL9N306AD3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms
Package / Case : TO-251


Features:

•  Fast switching
•  rDS(ON)     = 0.0052Ω (Typ), VGS = 10V
•  rDS(ON)     = 0.0085Ω (Typ), VGS = 4.5V
•  Qg (Typ)    = 30nC,               VGS = 5V
•  Qgd (Typ)  = 11nC
•  CISS (Typ) = 3400pF


Application

•    DC/DC converters


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID Drain Current
Continuous (TC= 25oC, VGS= 10V) = 100o
Continuous (TC= 25oC, VGS= V, RJC=52oCW
Pulsed		 50 A
50 A
16 A
Figure 4A
PD Power dissipation
Derate above 25oC
 125
0.83		 W
W/
TJ, TSTG Operating and Storage Temperature -55 to 175



Description

This ISL9N306AD3 employs a new advanced trench MOSFET technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this ISL9N306AD3 improves the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.




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