ISL9N303AP3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0026 Ohms


Features:

•Fast switching
•rDS(ON) = 0.0026 (Typ), VGS = 10V
•rDS(ON) = 0.004 (Typ), VGS = 4.5V
•Qg (Typ) = 61nC, VGS = 5V
•Qgd (Typ) = 17nC
•CISS (Typ) = 7000pF

Application

•DC/DC converters


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RJA = 43oC/W) Pulsed	75	A
		75	A
		25	A
		Figure 4
PD	Power dissipation Derate above	215 1.43	W W/
TJ, TSTG	Operating and Storage Temperature	-55 to 175

Description

This ISL9N303AP3 employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this ISL9N303AP3 improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Parameters:

Technical/Catalog Information	ISL9N303AP3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	7000pF @ 15V
Power - Max	215W
Packaging	Tube
Gate Charge (Qg) @ Vgs	172nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ISL9N303AP3 ISL9N303AP3