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ISL9N302AS3

MOSFET N-Ch LL UltraFET PWM Optimized

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SeekIC No. : 00163088 Detail

ISL9N302AS3: MOSFET N-Ch LL UltraFET PWM Optimized

ISL9N302AS3 Data Sheet

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Part Number:
ISL9N302AS3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0019 Ohms Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Tube    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Packaging : Tube
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0019 Ohms
Package / Case : TO-263AB


Parameters:

Technical/Catalog InformationISL9N302AS3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs2.3 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 11000pF @ 15V
Power - Max345W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CaseTO-262AA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ISL9N302AS3
ISL9N302AS3



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