ISL9N302AP3 Selling Leads, Price trend , Fairchild Semiconductor, ISL9N302AP3 DataSheet download, circuit diagram from SeekIC.com

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ISL9N302AP3: MOSFET N-Channel PWM Logic Level

ISL9N302AP3 Data Sheet

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Part Number:: ISL9N302AP3
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	75 A
Resistance Drain-Source RDS (on) :	0.0019 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0019 Ohms

Parameters:

Technical/Catalog Information	ISL9N302AP3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	2.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	11000pF @ 15V
Power - Max	345W
Packaging	Tube
Gate Charge (Qg) @ Vgs	300nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ISL9N302AP3 ISL9N302AP3

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ISL9N302AP3

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