ISL9N2357D3ST

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 35 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.007 Ohms


Features:

`r<sub>DS(ON)</sub> = 0.006 Typical, V<sub>GS</sub> = 10V
`Q_g  Total 85nC Typical, V_GS= 10V
`Q<sub>gd</sub> 16nC Typical
`C_ISS 5600PF Typical

 

Specifications

SYMBOL	PARAMETER	ISL9N2357D3ST	UNITS
VDSS	Drain to Source Voltage (Note 1)	30	V
VDGR	Drain to Gate Voltage (RGS = 20k) (Note 1)	30	V
VGS	Gate to Source Voltage	±20	V
ID ID IDM	Drain Current Continuous (TC= 25 , VGS = 10V) (Figure 2) Continuous (TC=100, VGS = 10V) Pulsed Drain Current	35 35 Figure 4	A A A
PD	Power Dissipation Derate Above 25	100 0.67	W W/
TJ,TSTG	Operating and Storage Temperatur	-55 to 175
TL Tpkg	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	300 260
THERMAL SPECIFICATIONS
RJC	Thermal Resistance Junction to Case, TO-252	1.5	/W
RJA	Thermal Resistance Junction to Ambient TO-252	100	/W

NOTE:
1.TJ = 25 to 150 .
CAUTION: Stresses above those listed in "Absolute Maximum Ratings!± may cause permanent damage to the device. This is a stress only ratg and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

UltraFET^®  Trench from Fairchild ISL9N2357D3ST is a new advanced  MOSFET technology that achieves the lowest possible on- resistance per silicon area while maintaining fast switching  and low gate charge. The reduced conduction and switching  losses extend battery life in notebook PCs, cellular  telephones and other portable information appliances and  improve the overall efficiency of high frequency DC-DC  converters used to power the latest microprocessors.