ISL9K8120P3

Product : Fast Recovery Rectifiers
Recovery Time : 44 ns
Mounting Style : Through Hole
Packaging : Tube
Max Surge Current : 100 A
Reverse Current IR : 100 ua
Configuration : Dual Common Cathode
Package / Case : TO-220AB
Forward Continuous Current : 16 A
Reverse Voltage : 1200 V
Forward Voltage Drop : 3.3 V at 8 A


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t_b / t_a > 5.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t_rr < 32ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated


Application

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


Specifications

Symbol	Parameter	Ratings	Units
VRRM	Repetitive Peak Reverse Voltage	1200	V
VRWM	Working Peak Reverse Voltage	1200	V
VR	DC Blocking Voltage	1200	V
IF(AV)	Average Rectified Forward Current (TC = 105oC) Total Device Current (Both Legs)	8 16	A A
IFRM	Repetitive Peak Surge Current (20kHz Square Wave)	16	A
IFSM	Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	100	A
PD	Power Dissipation	71	W
EAVL	Avalanche Energy (1A, 40mH)	20	mJ
TJ, TSTG	Operating and Storage Temperature Range	-55 to 175	°C
TL TPKG	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528	300 260	°C °C

Description

The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I_RM(REC)) and exceptionally soft recovery under typical operating conditions.

This ISL9K8120P3 is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I_RM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49413.