ISL9K30120G3

Product : Fast Recovery Rectifiers
Mounting Style : Through Hole
Forward Continuous Current : 30 A
Packaging : Tube
Reverse Current IR : 100 ua
Package / Case : TO-247
Configuration : Dual Common Cathode
Reverse Voltage : 1200 V
Forward Voltage Drop : 3.3 V
Recovery Time : 100 ns
Max Surge Current : 325 A


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t_b / t_a > 4.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t_rr < 56ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated


Application

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


Specifications

Symbol	Parameter	Ratings	Units
VRRM	Repetitive Reverse Voltage	1200	V
VRWM	Working Peak Reverse Voltage	1200	V
VR	DC Blocking Voltage	1200	V
IF(AV)	Average Rectified Forward Current (TC = 80oC) Total Device Current (Both Legs)	30 60	A A
IFRM	Repetitive Peak Surge Current (20kHz Square Wave)	70	A
IFSM	Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	325	A
PD	Power Dissipation	166	W
EAVL	Avalanche Energy (1A, 40mH)	20	mJ
TJ, TSTG	Operating and Storage Temperature Range	-55 to 150	°C
TL TPKG	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528	300 260	°C °C

Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I_RM(REC)) and exceptionally soft recovery under typical operating conditions.

This ISL9K30120G3 is intended for use as a free wheeling or boost diode in power supplies and other power switching
applications. The low I_RM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49415.