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ISL73096RH

Features: • Electrically Screened to SMD # 5962-07218• QML Qualified per MIL-PRF-38535 Requirements• Radiation Environment- Gamma Dose () . . . . . . . . . . . . . . . . . 3 x 105RAD(Si)- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation• NPN Gain Bandwidth Product ...

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SeekIC No. : 004380469 Detail

ISL73096RH: Features: • Electrically Screened to SMD # 5962-07218• QML Qualified per MIL-PRF-38535 Requirements• Radiation Environment- Gamma Dose () . . . . . . . . . . . . . . . . . 3 x 105R...

ISL73096RH Data Sheet

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Part Number:
ISL73096RH
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose () . . . . . . . . . . . . . . . . . 3 x 105RAD(Si)
- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (FT) . . . . . . . . .8GHz (Typ)
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . 130 (Typ)
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT). . . . . . . . 5.5GHz (Typ)
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)




Application

• High Frequency Amplifiers and Mixers
- Refer to Application Note AN9315
• High Frequency Converters
• Synchronous Detectors




Pinout






Description

The ISL73096RH is a radiation hardened transistor array consisting of three NPN transistors and two PNP transistors on a common substrate. One of our bonded wafer,dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

The high gain-bandwidth product ISL73096RH and low noise figure of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the NPN and PNP transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility.






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