IC DRIVER MOSF DUAL SYNC 16QFN
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe ISL60002 FGA voltage references are very high precision analog voltage references f...
US $2.57 - 3.95 / Piece
Voltage & Current References PREC 3.3V HI OUTPUT FGAVREF 1MV -40 - +1
Series: | - | Manufacturer: | Intersil |
Configuration: | High and Low Side, Synchronous | Type: | - |
Input Type: | PWM | Delay Time: | 10ns |
Package / Case : | TSSOP-14 | Current - Peak: | 1.25A |
On-State Resistance: | - | Current - Output / Channel: | - |
Number of Configurations: | 2 | Current - Peak Output: | - |
Number of Outputs: | 4 | High Side Voltage - Max (Bootstrap): | 36V |
Voltage - Supply: | 10.8 V ~ 13.2 V | Operating Temperature: | 0°C ~ 85°C |
Mounting Type: | Surface Mount | Package / Case: | 16-VQFN Exposed Pad |
Supplier Device Package: | 16-QFN-EP (4x4) |
The ISL6614CRZ belongs to ISL6614, which integrates two ISL6613 MOSFET drivers and is sipecifically designed to drive two independent power channels in a Multi-Phase interleaved buck converter topology. These drivers combined with HlP63xx or lSL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6614CRZ drives both the upper and lower gates simultaneously over a range from 5V to 12v. This drive- voltage ISL6614CRZ provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products ISL6614CRZ add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during stanup. The over- temperature protection feature prevents failures resulting from excessive power dissipation by shutting off the outputs when itsjunction temperature exceeds 150"C (typically). The driver resets once its junction temperature returns to 108 (typically). The ISL6614CRZ also features a three-state PWM input which, working together with IntersiI's multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.
The features of ISL6614CRZ can be summarized as (1)pin-to-pin compatible with HIP6602 SOIC family for better; (2)perfomrance and extra protection features ; (3)quad N-channel MOSFET drives for two synchronous rectified bridges ; (4)advanced adaptive zero shoot-through protection: body diode detection; auto-zero of rDS(ON) conduction offset effect ; (5)adjustable gate voltage(5V to 12V) for optimal efficiency ; (6)internal bootatrap schottky diode; (7)bootstrap capacitor overcharging prevention ; (8)supports high switching frequency (up to 1MHz):3A sinking current capability; fast rise/fall times and low propagation delays; (9)three-state PWM input for output stage shutdown ; (10)Three-state PWM input hysteresis for applications with ; (11)power sequencing requirement ; (12)Pre-POP overvoltage +protection ; (13)VCC undervoltage protection ; (14)over temperature protection (OTP) with 42 hysteresis ; (15)expandable bottom copper pad for enhanced heat sinking ; (16)QFN Package:compliant to JEDEC PUB95 MO 220 QFN - Quad flat no leads - package outline; near chip scale package footprint, which improves PCB etticiency and has a thinner profile ; (17)Pb-Free plus anneal available (ROHS compliant).
The maximum absolute ratings of ISL6614CRZ are (1)supply voltage, VCC : 15V; (2)supply voltage, PVCC:VCC+0.3V; (3)BOOT voltage, VBOOT-GND:36V; (4)input voltage(VPWM): GND-0.3V to7V; (5)UGATE: VPHASE-0.3VDC to VBOOT+0.3V; VPHASE-3.5V(<100ns pulse width, 2uJ) to VBOOT+0.3V; (6)PHASE GND - 0.3VDC to VPVCC+0.3V; (7)GND - 5V (<100ns, 20uJ) to 30V (<200ns, VBOOT-GND<36V); (8)ESD Rating Human Body Model:Class I JEDEC STD; (9)maximum junction temperature (plastic package):150°C; (10)maximum storage temperature range: -65°C to 150°C; (11)maximum lead temperature(soldering 10s):300°C(SOIC - lead tips only)(12)ambient temperature range :-40°C to +85°C; (13)maximum operating junction temperature:125°C.(CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.)
Technical/Catalog Information | ISL6614CRZ |
Vendor | Intersil |
Category | Integrated Circuits (ICs) |
Configuration | High and Low Side, Synchronous |
Voltage - Supply | 10.8 V ~ 13.2 V |
Current - Peak | 1.25A |
Delay Time | 10.0ns |
Package / Case | 16-QFN |
Packaging | Tube |
Number of Outputs | 4 |
Input Type | PWM |
Number of Configurations | 2 |
Operating Temperature | 0°C ~ 85°C |
High Side Voltage - Max (Bootstrap) | 36V |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ISL6614CRZ ISL6614CRZ |