ISL6609A

Features:

Drives Two N-Channel MOSFETs
Adaptive Shoot-Through Protection
0.4 On-Resistance and 4A Sink Current Capability
Supports High Switching Frequency
-Fast Output Rise and Fall
-Ultra Low Three-State Hold-Off Time (20ns)
ISL6605 Replacement with Enhanced Performance
BOOT Capacitor Overcharge Prevention (ISL6609A)
Low V_{F^{Internal Bootstrap Diode}}
Low Bias Supply Current
Enable Input and Power-On Reset
QFN Package
-Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline
-Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
Pb-Free Plus Anneal Available (RoHS Compliant)




Application

Core Voltage Supplies for Intel? and AMD^®Microprocessors
High Frequency Low Profile High Efficiency DC/DC Converters
High Current Low Voltage DC/DC Converters
Synchronous Rectification for Isolated Power Supplies




Pinout






Specifications

Supply Voltage (V_CC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V_EN, V_PWM) . . . . . . . . . . . . . . . -0.3V to V_^CC + 0.3V
BOOT Voltage (V_BOOT-GND). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (VBOOT-PHASE) . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10J) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . VPHASE - 0.3V (DC) to VBOOT
VPHASE - 5V (<20ns Pulse Width, 10J) to VBOOT
LGATE Voltage . . . . . . . . . . . . . . . .GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5J) to VCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . .-40°C to 125°C
HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV




Description

The ISL6609, ISL6609A is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6609, ISL6609A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6609, ISL6609A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6609As bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node.