ISL6594B

Features:

Dual MOSFET Drives for Synchronous Rectified Bridge
Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
36V Internal Bootstrap Schottky Diode
Bootstrap Capacitor Overcharging Prevention
Supports High Switching Frequency (up to 2MHz)
--3A Sinking Current Capability
--Fast Rise/Fall Times and Low Propagation Delays
Three-State PWM Input for Output Stage Shutdown
Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
Pre-POR Overvoltage Protection
VCC Undervoltage Protection
Expandable Bottom Copper Pad for Enhanced Heat Sinking
Dual Flat No-Lead (DFN) Package
-- Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
Pb-Free Available (RoHS Compliant)

Application

Core Regulators for Intel(R) and AMD(R) Microprocessors
High Current DC/DC Converters
High Frequency and High Efficiency VRM and VRD




Pinout






Specifications

Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V_BOOT ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36V
Input Voltage (V_PWM) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . V_PHASE - 0.3V_DC to V_BOOT + 0.3V
V_PHASE - 3.5V (<100ns Pulse Width, 2J) to V_BOOT + 0.3V
LGATE. . . . . . . . . . . . . . . . . . . . . . GND - 0.3V_DC to VPVCC+ 0.3V
GND - 5V (<100ns Pulse Width, 2J) to V_PVCC+ 0.3V
PHASE. . . . . . . . . . . . . . . GND - 0.3V_DC to 15V_DC (V_PVCC= 12V)
GND - 8V (<400ns, 20J) to 24V (<200ns, V _BOOT-PHASE= 12V)
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . .Class I JEDEC STD






Description

The ISL6594A and ISL6594B are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with the ISL6592 Digital Multi-Phase Buck PWM controller and N-Channel MOSFETs form a complete core-voltage regulator solution for advanced microprocessors. The ISL6594A drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6594B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial start-up. These drivers also feature a three-state PWM input which, working together with Intersils multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.