ISL658090EVAL2

DescriptionThe ISL658090EVAL2 Integrated Power Stage is a High Side FET/driver combination that provides high current capability per converter phase at high switching frequency. The chip incorporates intelligence to provide fast transient response and digital communication to the ISL6590 Digital C...

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SeekIC No. : 004380397 Detail

ISL658090EVAL2: DescriptionThe ISL658090EVAL2 Integrated Power Stage is a High Side FET/driver combination that provides high current capability per converter phase at high switching frequency. The chip incorporate...

floor Price/Ceiling Price

Part Number:
ISL658090EVAL2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Description

The ISL658090EVAL2 Integrated Power Stage is a High Side FET/driver combination that provides high current capability per converter phase at high switching frequency. The chip incorporates intelligence to provide fast transient response and digital communication to the ISL6590 Digital Controller.

The features of the ISL658090EVAL2 are: (1)Optimized for Intel VR10 applications; (2)VIN = 12V; (3)Phase switching frequencies of 250kHz to 1MHz; (4)Phase current capability up to 25A; (5)High Side P-channel MOSFET; (6)Low Side MOSFET drivers; (7)Accurate, lossless, Current Sense; (8)Programmable MOSFET non-overlap timing (through the ISL6590 Digital Controller); (9)Active Transient Response (ATR) minimizes voltage droop/overshoot during large load current transients.; (10)Serial control interface for system monitoring and; (11)  configuration (with ISL6590 Controller); (12)Provides an optimal power solution when combined with; (13)the ISL6590 Digital Controller; (14)Digital interface for high noise immunity and point-of-load placement; (15)On board analog-to-digital converters

The absolute maximum ratings of the ISL658090EVAL2 are: (1)VCC: -0.3V to 18V; (2)VDD: -0.3V to 3.6V; (3)VREF: -0.3V to VDD; (4)VDRIVE: -0.3V to VCC; (5)VCC-VSW (PChannel VBRSS): 20V; (6)ISW peak: 30A; (7)ICC rms: 8A; (8)MOSFET Gate Capacitance: See Max Gate Drive section; (9)All Logic: -0.3V to 3.6V; (10)VSENN, VSENP: -0.3V to 3.6V; (11)ESD Rating Human Body Model (Per JEDEC JESD22-A114): 1.5KV.




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