ISL6206

TheISL6206dualMOSFETdrivercontrolsbothhigh-sideand low-sideN-ChannelFE T sfromoneexternally providedPWM  singnal.

A rising edge on PWM initiates the turn-off of the lower MOSFET (see Timing Diagram). After a short propagation delay [t ], the lower gate begins to fall. Typical fall PDLLGATE times [t_FLGATE ] are provided in the Electrical Specifications section. Adaptive shoot-through circuitry monitors the LGATE voltage and determines the upper gate delay time [t_PDHUGATE ] based on how quickly the LGATE voltage  drops below 1V. This prevents both the lower and upper MOSFETs from conducting simultaneously or shoot- through. Once this delay period is complete the upper gate drive begins to rise [t_RUGATE ] and the upper MOSFET turns on.

A falling transition on PWM indicates the turn-off of the upper MOSFET and the turn-on of the lower MOSFET. A short propagation delay [t_PDLUGATE ] is encountered before the upper gate begins to fall [t _FUGATE]. Again, the adaptive  shoot-through circuitry determines the lower gate delay time,t_PDHLGATE . The upper MOSFET gate voltage is monitored andthe lowergate isallowedto riseafter theupper MOSFET gate-to-source voltage drops below 1V. The lower gate then rises[t _RLGATE], turning on the lower MOSFET.