Features: • Drives Two N-Channel MOSFETs• Adaptive Shoot-Through Protection• 25V Operation voltage• Supports High Switching Frequency- Fast Output Rise Time- Propagation Delay 30ns• Small 8 Lead SOIC Package• Dual Gate-Drive Voltages for the Lower MOSFET for Opt...
ISL6205: Features: • Drives Two N-Channel MOSFETs• Adaptive Shoot-Through Protection• 25V Operation voltage• Supports High Switching Frequency- Fast Output Rise Time- Propagation Dela...
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DescriptionThe ISL60002 FGA voltage references are very high precision analog voltage references f...
US $2.57 - 3.95 / Piece
Voltage & Current References PREC 3.3V HI OUTPUT FGAVREF 1MV -40 - +1
The ISL6205 is a high-voltage, high-frequency, dual MOSFET driver specifically designed to drive two N-Channe power MOSFETs in a synchronous rectified buck converter topology in mobile computing applications. This driver combined with an ISL6223 or other Intersil Multi-Phase Buck PWM controllers forms a complete single-stage core-voltage regulator solution for advanced mobile microprocessors. The ISL6205 allows users to select a gate voltage ranging from 5V to 12V for the lower MOSFET in the synchronous rectified buck converter. Using a 12V gate voltage reduces the RDS(ON) and the conduction loss in the MOSFET. The upper gate is required to run at 5V.
The ISL6205 features a three-state PWM input that, working together with any Intersil multiphase PWM controllers, will prevent a negative transient on the output voltage when the output is being shut down. This feature eliminates the schottky diode that is usually seen in a microprocessorpower system for protecting the microprocessor from any reversed output voltage damage.
The output drivers in the ISL6205 have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. This product implements bootstrapping on the upper gate, reducing implementation complexity and allowing the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.