DescriptionThe ISL1LPS51218A-200TQLI is one member of the ISL1LPS51218A family which is designed as the 256K x 16 high-speed asynchronous CMOS static RAM device that is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10 mm). Features ...
ISL1LPS51218A-200TQLI: DescriptionThe ISL1LPS51218A-200TQLI is one member of the ISL1LPS51218A family which is designed as the 256K x 16 high-speed asynchronous CMOS static RAM device that is packaged in the JEDEC standar...
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The ISL1LPS51218A-200TQLI is one member of the ISL1LPS51218A family which is designed as the 256K x 16 high-speed asynchronous CMOS static RAM device that is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10 mm).
Features of the ISL1LPS51218A-200TQLI are:(1)High-speed access time: 10, 12 ns; (2)CMOS low power operation; (3)Low stand-by power: Less than 5 mA (typ.) CMOS stand-by; (4)TTL compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refresh required; (7)Three state outputs; (8)Data control for upper and lower bytes; (9)Industrial temperature available.
The absolute maximum ratings of the ISL1LPS51218A-200TQLI can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.0 W;(4)VDD Related to GND: -0.3 to +4.0 V.
The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -2 to +2 uA;(6)Output Leakage: -2 to +2 uA. If you want to know more information such as the electrical characteristics about the ISL1LPS51218A-200TQLI, please download the datasheet in www.seekic.com or www.chinaicmart.com.