Features: ・Excellent linearity of DC forward current gain.・Small collector to emitter saturation voltage VCE(sat)=-0.3VmaxApplicationFor small type machine low frequency voltage amplify application.Specifications Symbol Parameter Ratings UNIT ISA1235AC1 ISA160...
ISA1235AC1: Features: ・Excellent linearity of DC forward current gain.・Small collector to emitter saturation voltage VCE(sat)=-0.3VmaxApplicationFor small type machine low frequency voltage amplif...
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Features: ・Excellent linearity of DC forward current gain.・Small collector to emitte...
Features: ・Excellent linearity of DC forward current gain.・Small collector to emitte...
Features: ・Excellent linearity of DC forward current gain.・Small collector to emitte...
Symbol |
Parameter |
Ratings |
UNIT | |
ISA1235AC1 |
ISA1602AM1 | |||
VCBO |
Collector to Base voltage |
-60 |
V | |
VEOB |
Collector to Emitter voltage |
-6 |
V | |
VCEO |
Emitter to Base voltage |
-50 |
V | |
IC |
Collector current |
-200 |
mA | |
PC |
Collector dissipation |
200 |
mW | |
TJ |
Junction temperature |
+150 |
||
TSTG |
Storage temperature |
-55~+150 |
ISA1235AC1 ISA1602AM1 is super mini package resin sealed silicon PNP epitaxial type transistor.
These are designed for low frequency voltage amplify application .