Features: • Industry-standard Microwire Interface - Non-volatile data storage - Low voltage operation: Vcc = 1.8V to 5.5V -2 Vcc = 2.5V to 5.5V -3 - Full TTL compatible inputs and outputs - Auto increment for efficient data dump• User Configured Memory Organization - By 16-bit or by 8-...
IS93C76A: Features: • Industry-standard Microwire Interface - Non-volatile data storage - Low voltage operation: Vcc = 1.8V to 5.5V -2 Vcc = 2.5V to 5.5V -3 - Full TTL compatible inputs and outputs - Au...
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Symbol | Parameter |
Value |
Unit |
VS | Supply Voltage |
0.5 to +6.5 |
V |
VP | Voltage on Any Pin |
0.5 to Vcc + 0.5 |
V |
VTERM | Temperature Under Bias |
55 to +125 |
|
TBIAS | Storage Temperature |
65 to +150 |
|
IOUT | Output Current |
5 |
mA |
IS93C76A/86A are 8kb/16kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. IS93C76A/ 86A contains power-efficient read/write memory, and organization of either 1,024/2,048 bytes of 8 bits or 512/1,024 words of 16 bits. When the ORG pin is connected to Vcc or left unconnected, x16 is selected; when it is connected to ground, x8 is selected.
An instruction set defines the operation of the devices, including read, write, and mode-enable functions. To protect against inadvertent data modification, all erase and write instructions are accepted only while the device are write-enabled. A selected x8 byte or x16 word can be modified with a single WRITE or ERASE instruction. Additionally, the two instructions WRITE ALL or ERASE ALL can program an entire array. Once a device begins its self-timed program procedure,the data out pin (Dout) can indicate the READY/ BUSY status by raising chip select (CS). The selftimed write cycle includes an automatic erasebefore- write capability. The devices can output any number of consecutive bytes/words using a single READ instruction.