Features: • High-speed access time: 20 ns• Low active power: 200 mW (typical)• Low standby power:250 µW (typical) CMOS standby• Fully static operation: no clock or refreshrequired• TTL compatible inputs and outputs• Single 5V power supply• Temperatur...
IS65C256: Features: • High-speed access time: 20 ns• Low active power: 200 mW (typical)• Low standby power:250 µW (typical) CMOS standby• Fully static operation: no clock or refr...
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Features: • High-speed access time: 35, 45 ns• Low active power: 100 mW (typical)̶...
The ISSI IS65C256 is a low power, 32,768 word by 8-bitCMOS static RAM. It is fabricated using ISSI's highperformance,low power CMOS technology.
When CS is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down to 250 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an activeLOW Chip Select (CS) input and an active LOW OutputEnable (OE) input. The active LOW Write Enable (WE)controls both writing and reading of the memory.
The IS65C256 is Packaged in the JEDEC Standard 28-PinSOP and 28-Pin TSOP (Type I).