Features: • High-speed access time: 20 ns• CMOS low power operation: 38 mW (typical) operating 10 W (typical) standby• TTL compatible interface levels• Single power supply: 2.6V (-5%/+10%)• Fully static operation: no clock or refresh required• Three state output...
IS64LV6416AL: Features: • High-speed access time: 20 ns• CMOS low power operation: 38 mW (typical) operating 10 W (typical) standby• TTL compatible interface levels• Single power supply: 2...
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Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
0.5 to VDD+0.5 |
V |
TSTG |
Storage Temperature |
65 to +150 |
°C |
PT |
Power Dissipation |
1.5 |
W |
VDD |
VDD Related to GND |
-0.2 to +3.9 |
V |
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The ISSI IS64LV6416AL is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 20ns with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS64LV6416AL is packaged in the JEDEC standard 44-pin TSOP-II, 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm).