Features: •High-speed access time: 45ns, 55ns, 70ns•CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby•TTL compatible interface levels•Single power supply 1.65V--2.2V VDD(62WV12816ALL) 2.5V--3.6V VDD(62WV12816BLL)•Fully static opera...
IS62WV2816ALL: Features: •High-speed access time: 45ns, 55ns, 70ns•CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby•TTL compatible interface levels•Sin...
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Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
0.2 to VDD +0.3 | V |
TSTG |
Storage Temperature |
65 to +150 |
|
PT |
Power Dissipation |
1.0 | W |
The ISSI IS62WV12816ALL/ IS62WV12816BLL are high-speed, 2M bit static RAMs organized as 128K words by 16bits. It is fabricated using ISSI's high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields high-performance and low power consumption devices.
WhenCS1is HIGH (deselected) or when CS2 is LOW(deselected) or CS1is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down withCMOS input levels.
Easy memory expansion is provided by using Chip Enableand Output Enable inputs. The active LOW Write Enable(WE) controls both writing and reading of the memory. Adata byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62WV12816ALL and IS62WV12816BLL are packagedin the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).