IS62LV5128LL

Features:

• Access times of 70, 85 ns
• CMOS low power operation:
  - 135 mW (typical) operating
  - 16.5 µW (typical) standby
• Low data retention voltage: 2V (min.)
• Output Enable (OE) and Chip Enable (CE) inputs for ease in applications
• TTL compatible inputs and outputs
• Fully static operation:
  - No clock or refresh required
• Single 2.7V (min) to 3.15V (max) VCC power supply
• Available in 36-pin mini BGA


Specifications

Symbol	Parameter	Value	Unit
VTERM	Terminal Voltage with Respect to GND	0.5 to Vcc + 0.3	V
VCC	Vcc related to GND	0.3 to +3.3	V
TBIAS	Temperature Under Bias	40 to +85	°C
TSTG	Storage Temperature	65 to +150	°C
PT	Power Dissipation	1	W

Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Description

The ISSI IS62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. IS62LV5128LL is fabricated using ISSI's low voltage, six transistor (6T), CMOS technology. The IS62LV5128LL  is targeted to\ satisfy the demands of the state-of-the-art technologies such as cell phones and pagers.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Additionally, easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS62LV5128LL is available in a 36-pin mini BGA package (8mm x 10mm).