Features: •High-speed access time: 15, 20, 25 ns•Automatic power-down when chip is deselected•CMOS low power operation- 255 mW (max.) operating- 0.18 mW (max.) CMOS standby•TTL compatible interface levels•Single 3.3V power supply•Fully static operation: no clock...
IS62LV256L: Features: •High-speed access time: 15, 20, 25 ns•Automatic power-down when chip is deselected•CMOS low power operation- 255 mW (max.) operating- 0.18 mW (max.) CMOS standby•T...
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Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
0.5 to +4.6 |
V |
TBIAS |
Temperature Under Bias |
55 to +125 |
°C |
TSTG |
Storage Temperature |
65 to +150 |
°C |
PT |
Power Dissipation |
0.5 |
W |
IOUT |
DC Output Current (LOW) |
20 |
mA |
The ISSI IS62LV256L is a very high-speed, low power,32,768-word by 8-bit static RAM. IS62LV256L is fabricated using ISSI's high-performance CMOS technology. This IS62LV256L highly reliable pro- cess coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum.
When CE is HIGH (deselected), the IS62LV256L assumes a standby mode at which the power dissipation is reduced to 50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62LV256L is available in the JEDEC standard 28-pin SOJ and the 450-mil TSOP package.