Features: • Access times of 45, 55, and 70 ns• Low active power: 60 mW (typical)• Low standby power: 15 µW (typical) CMOS standby• Low data retention voltage: 2V (min.)• Ultra Low Power• Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease ...
IS62LV1288LL: Features: • Access times of 45, 55, and 70 ns• Low active power: 60 mW (typical)• Low standby power: 15 µW (typical) CMOS standby• Low data retention voltage: 2V (min.)...
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Symbol | Parameter | Value | Unit |
VTERM VCC TBIAS TSTG PT |
Terminal Voltage with Respect to GND Vcc related to GND Temperature Under Bias Storage Temperature Power Dissipation |
0.5 to Vcc + 0.5 0.3 to +3.6 40 to +85 65 to +150 0.7 |
V V W |
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The ISSI IS62LV1288LL is a low power and low Vcc,131,072-word by 8-bit CMOS static RAM. IS62LV1288LL is fabricated using ISSI's high-performance CMOS technology. This IS62LV1288LL highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the IS62LV1288LL assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62LV1288LL is available in 32-pin TSOP (Type I), STSOP (8 x 13.4mm), and 450-mil plastic SOP (525-mil pin to pin) packages.