IS62LV12816L

Features:

* High-speed access time: 70, 100, and 120 ns
* CMOS low power operation
   120 mW (typical) operating
   6 W (typical) CMOS standby
* TTL compatible interface levels
* Single 3V ± 10% VCC power supply
* Fully static operation: no clock or refresh required
* Three state outputs
* Data control for upper and lower bytes
* Industrial temperature available
* Available in the 44-pin TSOP (Type II) and 48-pin mini BGA


Pinout




Specifications

Symbol	Parameter	Value	Unit
VTERM	Terminal Voltage with Respect to GND	0.5 toVcc+0.5	V
TBIAS	Temperature Under Bias	40 to +85	°C
VCC	Vcc Related to GND	0.3 to +4.0	V
TSTG	Storage Temperature	65 to +150	°C
PT	Power Dissipation	1.0	W

Description

The ISSI IS62LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. IS62LV12816L is fabricated using ISSI's high-performance CMOS technology. This IS62LV12816L highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When  is HIGH (deselected), the IS62LV12816L assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs,  and . The active LOW Write Enable ( ) controls both writing and reading of the memory. A data byte allows Upper Byte () and Lower Byte () access.

The IS62LV12816L is packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA.